Search results for "Spectral line intensity"

showing 2 items of 2 documents

Theoretical absorption spectrum of the Ar–CO van der Waals complex

2003

The three-dimensional intermolecular electric dipole moment surface of Ar–CO is calculated at the coupled cluster singles and doubles level of theory with the aug-cc-pVTZ basis set extended with a 3s3p2d1f1g set of midbond functions. Using the rovibrational energies and wave functions of our recent study [J. Chem. Phys. 117, 6562 (2002)], temperature-dependent spectral intensities are evaluated and compared to available experimental data. Based on the theoretical spectrum, alternative assignments of the experimentally observed lines in the fundamental band of CO around 2160 and 2166 cm−1 are suggested. Thomas.Bondo@uv.es

Coupled Cluster CalculationsAbsorption spectroscopyGeneral Physics and AstronomySpectral Line IntensitySpectral linesymbols.namesakePhysics and Astronomy (all)Argon ; Carbon Compounds ; Quasimolecules ; Molecular Moments ; Coupled Cluster Calculations ; Rotational-Vibrational States ; Spectral Line Intensity ; SpectraQuasimoleculesPhysics::Atomic and Molecular ClustersArgonPhysics::Chemical PhysicsPhysical and Theoretical Chemistry:FÍSICA::Química física [UNESCO]Rotational-Vibrational StatesBasis setMolecular MomentsChemistryIntermolecular forceRotational–vibrational spectroscopySpectraCarbon CompoundsUNESCO::FÍSICA::Química físicaElectric dipole momentCoupled clusterPhysics::Space Physicssymbolsvan der Waals forceAtomic physics
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Effect of reactive ion beam etching on the photoluminescence of CdTe epitaxial layers

2008

http://link.aip.org/link/?JAPIAU/103/056108/1

Materials sciencePhotoluminescenceSapphireSpectral line intensityCadmium compoundsIon platingAnalytical chemistryUNESCO::FÍSICASemiconductor epitaxial layersGeneral Physics and AstronomyII-VI semiconductorsEpitaxyAcceptorVapour phase epitaxial growthEtchingEtching (microfabrication):FÍSICA [UNESCO]Ion beam assisted depositionMOCVDSapphireCadmium compounds ; Etching ; II-VI semiconductors ; Impurities ; Ion beam assisted deposition ; MOCVD ; Photoluminescence ; Sapphire ; Semiconductor epitaxial layers ; Spectral line intensity ; Vapour phase epitaxial growthMetalorganic vapour phase epitaxyIon beam-assisted depositionPhotoluminescenceImpurities
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